1. Solvothermal synthesis
1. Rawscov khoom sib pivcov
Zinc hmoov thiab selenium hmoov yog tov ntawm 1: 1 molar ratio, thiab deionized dej los yog ethylene glycol yog ntxiv raws li qhov hnyav nruab nrab 35..
2.Cov xwm txheej tshwm sim
o Kev ntsuas kub: 180-220 ° C
o Lub sijhawm ua haujlwm: 12-24 teev
o Siab: Tswj lub siab tus kheej tsim nyob rau hauv lub kaw cov tshuaj tiv thaiv kettle
Kev sib xyaw ncaj qha ntawm zinc thiab selenium yog yooj yim los ntawm cua sov los tsim nanoscale zinc selenide crystals 35.
3.Cov txheej txheem tom qab khocov
Tom qab cov tshuaj tiv thaiv, nws tau centrifuged, ntxuav nrog dilute ammonia (80 ° C), methanol, thiab lub tshuab nqus tsev qhuav (120 ° C, P₂O₅).ua btainhmoov> 99.9% purity 13.
2. Tshuaj vapor deposition txoj kev
1.Raw khoom pretreatment
o Lub purity ntawm zinc raw khoom yog ≥ 99.99% thiab muab tso rau hauv graphite crucible
o Hydrogen selenide gas yog thauj los ntawm argon gas nqa6.
2.Kev tswj qhov kub thiab txias
o Zinc evaporation tsam: 850-900 ° C
o Deposition cheeb tsam: 450-500 ° C
Directional deposition ntawm zinc vapor thiab hydrogen selenide los ntawm kub gradient 6.
3.Gas parameters
o Argon ntws: 5-10L / min
o Ib nrab siab ntawm hydrogen selenide:0.1-0.3 hli
Deposition tus nqi tuaj yeem ncav cuag 0.5-1.2 mm / h, ua rau tsim ntawm 60-100 mm tuab polycrystalline zinc selenide 6.
3. Khoom-theem direct synthesis txoj kev
1. Rawskev tuav khoomcov
Cov tshuaj zinc chloride tau tshwm sim nrog cov tshuaj oxalic acid los tsim zinc oxalate precipitate, uas tau qhuav thiab hauv av thiab tov nrog selenium hmoov ntawm qhov sib piv ntawm 1: 1.05 molar 4..
2.Thermal reaction parameters
o Lub tshuab nqus tsev rauv kub: 600-650 ° C
o Cia lub sij hawm sov: 4-6 teev
Zinc selenide hmoov nrog qhov loj me ntawm 2-10 μm yog tsim los ntawm cov tshuaj tiv thaiv-theem diffusion 4.
Kev sib piv ntawm cov txheej txheem tseem ceeb
| txoj kev | Khoom topography | Particle loj/tuab | Crystallinity | Cov teb ntawm daim ntawv thov |
| Solvothermal method 35 | Nanoballs / pas nrig | 20-100 nm | Cubic sphalerite | Cov khoom siv Optoelectronic |
| Vapor deposition 6 | Polycrystalline blocks | 60-100 hli | Hexagonal qauv | Infrared optics |
| Cov txheej txheem Solid-phase 4 | Micron-loj hmoov | 2-10 m² | Kub theem | Infrared khoom precursors |
Cov ntsiab lus tseem ceeb ntawm kev tswj cov txheej txheem tshwj xeeb: txoj kev solvothermal yuav tsum tau ntxiv cov surfactants xws li oleic acid los tswj cov morphology 5, thiab vapor deposition yuav tsum tau lub substrate roughness yuav
1. Lub cev vapor deposition (PVD).
1.Technology Txoj Kev
o Zinc selenide raw khoom yog vaporized nyob rau hauv lub tshuab nqus tsev ib puag ncig thiab tso rau ntawm lub substrate nto siv sputtering los yog thermal evaporation technology12.
o Cov evaporation qhov chaw ntawm zinc thiab selenium yog rhuab mus rau qhov sib txawv kub gradients (zinc evaporation cheeb tsam: 800-850 ° C, selenium evaporation cheeb tsam: 450-500 ° C), thiab stoichiometric ratio yog tswj los ntawm kev tswj tus nqi evaporation.cov12.
2.Parameter tswj
o Nqus: ≤1 × 10⁻³ Pa
o Basal kub: 200-400 ° C
o Tus nqi tso nyiaj:0.2-1.0 nm / s
Zinc selenide films nrog lub thickness ntawm 50-500 nm tuaj yeem npaj rau siv hauv infrared optics 25.
2. Mechanical pob milling txoj kev
1.Raw khoom tuav
o Zinc hmoov (purity≥99.9%) yog tov nrog selenium hmoov ntawm ib tug 1: 1 molar piv thiab loaded rau hauv lub stainless hlau pob zeb hub 23.
2.Txheej txheem tsis
o Lub sij hawm sib tsoo pob: 10-20 teev
Ceev: 300-500 rpm
o Pellet ratio: 10: 1 (zirconia sib tsoo pob).
Zinc selenide nanoparticles nrog qhov loj me ntawm 50-200 nm tau tsim los ntawm cov tshuaj tiv thaiv kev sib tsoo, nrog kev purity ntawm> 99% 23.
3. Kub nias sintering txoj kev
1.Kev npaj ua ntej
o Zinc selenide nanopowder (particle loj <100 nm) synthesized los ntawm solvothermal txoj kev ua raw khoom 4.
2.Sintering tsis
o Kub: 800-1000 ° C
o Siab: 30-50 MPa
o Ua kom sov: 2-4 teev
Cov khoom muaj qhov ntom ntawm> 98% thiab tuaj yeem ua tiav rau hauv cov khoom siv kho qhov muag loj xws li infrared qhov rais lossis lo ntsiab muag 45.
4. Molecular beam epitaxy (MBE).
1.Ultra-high lub tshuab nqus tsev ib puag ncig
o Nqus: ≤1 × 10⁻⁷ Pa
o Lub zinc thiab selenium molecular beams precisely tswj cov ntws los ntawm electron beam evaporation qhov chaw6.
2.Kev loj hlob tsis muaj
o Lub hauv paus kub: 300-500 ° C (GaAs lossis sapphire substrates feem ntau siv).
o Kev loj hlob:0.1-0.5nm / s
Ib leeg-crystal zinc selenide nyias zaj duab xis tuaj yeem npaj rau hauv qhov tuab ntawm 0.1-5 μm rau cov khoom siv optoelectronic siab 56.
Post lub sij hawm: Apr-23-2025